RUS
11.12.2017  
  


Vitaly V. Kveder

Vitaly V. Kveder

Prof. DPhil  Vitaly V. Kveder
Director of Institute of Solid State Physics RAS
Corresponding Member of Russian Academy of Sciences

Vitaly V. Kveder is an outstanding scientist working in the field of semiconductor physics and one of the recognized world experts in semiconductor defect engineering, nonlinear diffusion and impurity gettering.

V. V. Kveder was born on 3 October, 1949. In 1972 he graduated from Moscow Institute of Physics and Technology and started working as a research trainee at the Institute of Solid State Physics of the USSR Academy of Sciences. Having received his PhD in 1977, he worked as an associate and then senior researcher.  In 1987 V.V.Kveder finished his DPhil thesis and since 1989 till now has been heading the laboratory of defect structure spectroscopy. From 1992 to 2002 he was Deputy Director and since 2002 has been Director of the Institute of Solid State Physics RAS. In 2006 V.V.Kveder was elected a corresponding member of the Russian Academy of Sciences.

Main lines of scientific research:

  1. semiconductor defect physics: electron, magnetic and optical properties, extensive defect-impurity interaction;
  2. experimental methods: electron spin resonance, capacity spectroscopy, DLTS, optical spectroscopy (luminescence, optical absorption, photoconductivity), spin-dependent recombination, electron-dipole spin resonance (“Rashba effect”), spin-dependent defect reactions, microwave measurements;
  3. self-organization of defects and nonlinear diffusion;
  4. electron, magnetic and optical properties of fullerenes, fullerene-based carbon nano-tubes  and nano-compounds.

V.V.Kveder was the first to establish experimentally the existence of dislocation-related electron zones wherein he found and researched into the one-dimensional Rashba effect (“recombinated resonance”). He also showed that the effect can be used as a powerful tool for investigation of electron states of extensive defects. V.V.Kveder made intensive studies of trapping and recombination of electrons and holes on extensive defects. He discovered and investigated spin-dependent recombination of charge carriers by dislocations as well as hydrogen passivation of deep defects in silicon. Under his supervision a program was developed for simulation of phosphorous and aluminium gettering of impurities in silicon which is important for development of sate-of-the-art solar battery engineering.  In recent years V.V.Kveder has been successfully researching into the properties of fullerenes and specifics of nonlinear diffusion and reaction of defects in semiconductors and superionic crystals.

While studying fullerene crystals and carbon nanotubes V.V.Kveder established the specifics of phase transition in C60 crystals related to molecule motion quenching and discovered superparamagnetism in C60 crystals.

V.V.Kveder is chairman of the Scientific Council of the Institute of Solid State Physics RAS, a member of Thesis Council D 002.100.01, the Nanotechnology Council RAS, supervisor of the Fundamental Research Program, Division of Physical Sciences RAS, “Novel Materials and Structures”, member of the International Union of Pure and Applied Physics (IUPAP), representing Russia in the C10 Committee. He is also a permanent member of the International Scientific Committee of the International Conference “Extended Defects in Semiconductors” (EDS) and member of the International Program Committee of the International Conference “Gettering and Defect Engineering in Semiconductor Technology” (GADEST).

 

 

Contact information

Tel.: 8(496)52 219-82
+7 906 095 4402

Fax: +7(496) 522 8160
8(496) 522 8160

Address: Institute of Solid State Physics RAS, Chernogolovka, Moscow District, 2 Academician Ossipyan str., 142432 Russia

E-mail:

WWW: www.issp.ac.ru


  
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