Kapustin Dmitry Igorevich


Position: Engineer

About: Dmitry Kapustin was born in Chelyabinsk in 1993. In 2011, he moved to Moscow and entered Lomonosov Moscow State University, Faculty of Fundamental Physicohemical Engineering.

In 2015, Dmitry graduated from the university in Applied Mathematics and Physics. His diploma work was “Baric dependence of hydrogen solubility in silicon clathrate”.

At the present time, he works at the Institute of Solid State Physics of the Russian Academy of Science.

Areas of expertise: Silicon clathrates. Metal-hydrogen systems.

Career/Employment:

2013 - 2015     laboratory assistant

2015 - present     engineer

Location:121 ETK

E - mail: kapustindi@issp.ac.ru

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