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| Application fields | Detectors of the ionizing radiations (alpha, gamma, X-ray); IR optics; Substrates; Crystal pieces for vacuum deposition |
| Growth methods | HPVB or HPVZM |
| Range of "x" in Cd1-xZnxTe | 0.1-0.4 |
| Conductivity type | p-type or n-type |
| Specific resistivity | ³ 1010 Ohm´cm |
| Homogeneity of the main composition | ± 1 % |
| Carrier mobility:
- holes - electrons |
100 - 120 cm2/(V*s) 770 - 1100 cm2/(V*s) |
| Available purity | 5N and 6N |
| Max. detector element size | 4000 mm3 |
| Max. optical quality crystal dimensions | Diameter: 38.1 mm, length: 40 mm |
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