| Application fields: | IR optics; substrates; crystal pieces for vacuum deposition; THz detectors; THz emitters; optical limiters (ZnTe:V, ZnTe:V:Mn) |
| Growth methods: | HPVB or HPVZM |
| CAS # | 1315-11-3 |
| Structure | Cubic zincblende |
| Density: | 5.633 g/cm3 |
| Specific Heat: | 0.16 J/gK |
| Eg (300 K) | 2.25 eV |
| Max. Transmittance (l =7-12 mm): | 60 % |
| Max. specific resistivity | 109 Ohm´cm |
| Refractive index (l =10.6 mm): | 2.7 |
| Electrooptical coefficient r41 (l =10.6 mm): | 4.0´10-12 m/V |
| Max. IR-optic blank diameter/length: | Æ 38´20 mm |
| Max. single crystal diameter/length: | Æ 38´20 mm |
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Transmittance spectra
Concentration of impurities by GDMS in 5N ZnTe crystals (PDF file)
Concentration of impurities by GDMS in 6N ZnTe crystals (PDF file)
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