en ru

Time of flight SIMS
Time of Flight Secondary Ion Mass Spectrometr xyz-table control

Kveder Vitaly Vladimirovich

E-mail: kveder@issp.ac.ru

phone: 2-19-82

Working in:118 ГЛК

Position:principal research researcher

Work in LSDS since: 1977-11-01

Scientific degree:Corresponding member of RAS, Professor, Dr.S.

Kveder Vitaly Vladimirovich

Scientific Biography

Vitaly KVEDER was born in Orenburg 03 October 1949.
1966-1972 - He was graduated at the Department of General and Applied Physics of Moscow Institute of Physics and Technology (MIPT), Moscow, Russia.
Since 1972 to now he works as a scientist in the Institute of Solid State Physics Russian Academy of Science.
In 1977 he awarded the degree "Candidate of physical and mathematical sciences" (Ph.D).
In 1987 he awarded the degree "Doctor of physical and mathematical sciences" (Doctor of Science).
In 1989 he has got position of a Head of Laboratory for Spectroscopy of Defects Structure (LSDS) in the Institute of Solid State Physics
In 1997 he awarded the degree "Professor of Science”.
From 1992 till 2002 he was a Deputy Director of the Institute of Solid State Physics
From 2002 till now he is a Director of the Institute of Solid State Physics Russian Academy of Science
In 2006 he was elected to Russian Academy of Sciences as a corresponding member.

... top

Scientific intersts

- Physics of defects in semiconductors: electronic, magnetic and optical properties, interaction between extended defects and impurities; Methods used: Electron spin resonanse, DLTS, capacitance spectroscopy, optical spectroscopy (luminescence, optical absorption, photoconductance), spin-dependent recombination, electric-dipole spin resonance (“Rashba effect’), spin-dependent reactions of defects, microwave measurements.
- Self-organization of defects and non-linear diffusion
- Electronic, optical and magnetic properties of fullerenes, carbon nanotubes and fullerene-based compounds.

... top


Vitaly KVEDER is Chairman of the Scientific Council of the Institute of Solid State Physics,
a member of Scientific qualification Council D 002.100.01,
a member of a Nanotechnology Council of Russian Academy of Sciences,
a Head of a scientific program “New materials and structures” of Russian Academy of Sciences,
a member of International Scientific committee of the Conference “Extended defects in semiconductors” (EDS),
a member of International Program Committee of the Conference “Gettering and defect engineering in semiconductor technology” (GADEST),

... top


1980-1982 – Collaboration with Goettingen University (prof.W.Schroeter) and Clausthal University (prof. R.Labusch) (Germany) ~3months/year V.Kveder used to spend in Germany
1991-1992 – Collaboration with Lund University (prof.H.Grimmeiss) (Sweden) ) ~2months/year V.Kveder used to spend in Sweden
1992-1993 – Visiting professor in Tohoku University (Sendai, Japan) ~ 9 months
1993-1994 - Collaboration with Lund University (prof.H.Grimmeiss, prof.P.Omling)) (Sweden) ) ~2months/year V.Kveder used to spend in Sweden
1995-up to now - Collaboration with Goettingen University (Germany) ~2months/year V.Kveder spends in Germany

... top

Selected publications


  1. V. Kveder, М. Khorosheva, M. Seibt Interplay of Ni and Au atoms with dislocations and vacancy defects generated by moving dislocations in Si Solid State Phenomena Vol. 242 pp 147-154 2016

... top


  1. PDFD.A. Agarkov, I.N. Burmistrov, F.M. Tsybrov, I.I. Tartakovskii, V.V. Kharton, S.I. Bredikhin, V.V. Kveder Analysis of Interfacial Processes at the SOFC Electrodes by in-situ Raman Spectroscopy ECS Transactions Vol. 68, Iss. 1, pp. 2093-2103 2015

  2. M.A. Khorosheva, V.V. Kveder, M. Seibt On the nature of defects produced by motion of dislocations in silicon Phys. Status Solidi A 212, No. 8, 1695–1703 2015

... top


  1. V.Sedykh, V.Rusakov, V.Kveder, I. Zver’kova, V. Kulakov Fluctuations of structural transformations in La0.95Ba0.05Mn0.9857Fe0.02O3 under heat treatment Materials Letters 96, 82–84 (2013) 2013

  2. D. Abdelbarey, V. Kveder, W. Schroter, M. Seibt Platinum and gold diffusion monitor vacancy profiles induced into silicon wafers by aluminum alloying Phys. Status Solidi A 210, No. 4, 771–776 (2013) / DOI 10.1002/pssa.201300020 2013

... top


  1. S. Beringov, A. Shkulkov, Yu. Cherpak, M. Vlasiuk, T. Vlasenko, I. Buchovska, V. Kveder, M. Khorosheva Multicrystalline silicon production for solar cells applications by continuous induction melting in cold crucible Phys. Status Solidi C 10 №1, 2012 стр.24-27 2012

  2. Michael Seibt and Vitaly Kveder Gettering processes and the role of extended defects Chapter 4 in the book “Advanced Silicon Materials for Photovoltaic Applications” Edited by Sergio Pizzini, Wiley (John Wiley & Sons Ltd), ISBN 9780470661116, published in 2012 2012

  3. Molodtsova Olga, Irina Aristova, Vitalii Kveder, Martin Knupfer, Clemens Laubschat and Victor Aristov Morphology and Properties of Hybrid Systems Comprising Gold Nanoparticles in CuPc Matrices Journal of Physical Science and Application 2 (6), 166-170 (2012). ISSN:2159-5348 2012

  4. Michael Seibt, Reda Khalil, Vitaly Kveder, Wolfgang Schr?ter Electronic states at dislocations and metal silicide precipitates in crystalline silicon and their role in solar cell materials Applied Physics A04/2012; 96(1):235-253 2012

... top


  1. М.А.Хорошева, В.И.Орлов, Н.В.Абросимов, В.В.Кведер Определение неравновесной концентрации вакансий в кристаллах кремния по измерению концентрации атомов никеля в узлах решетки ЖЭТФ 137(5), 879-885 2010

  2. V. Yu. Aristov, O. V. Molodtsova, C. Laubschat, V. M. Zhilin, I. M. Aristova, V. V. Kveder, M. Knupfer Properties of hybrid organic-inorganic systems: Au nanoparticles embedded into an organic CuPc matrix APPLIED PHYSICS LETTERS 97, 113103 2010

  3. D. Abdelbarey, V. Kveder, W. Schr?ter, M. Seibt Light-induced point defect reactions of residual iron in crystalline silicon after aluminum gettering JOURNAL OF APPLIED PHYSICS 108, 043519 2010

... top


  1. Michael Seibt , Reda Khalil, Vitaly Kveder , Wolfgang Schr?ter Electronic states at dislocations and metal silicide precipitates in crystalline silicon and their role in solar cell materials Applied Physics A 96, 235-253 (DOI 10.1007/s00339-008-5027-8) 2009

  2. D. Abdelbarey, V. Kveder, W. Schroeter, M. Seibt Aluminum gettering of iron in silicon as a problem of the ternary phase diagram APPLIED PHYSICS LETTERS 94, 061912 2009

  3. M. Seibt, D. Abdelbarey, V. Kveder, C. Rudolf, P. Saring, L. Stolze, O. Voss Interaction of metal impurities with extended defects in crystalline silicon and its implications for gettering techniques used in photovoltaics Materials Science and Engineering B 159-60, 264-268 (doi:10.1016/j.mseb.2008.12.044) 2009

  4. Bredikhin Ivan, Sergey Bredikhin and Vitaly Kveder Optimization of the Charge Transfer Process in Composite Ni/YSZ Cermet Anodes ECS Transactions 25 (2) 1967-1974 2009

... top


  1. V. Kveder, V. Orlov, M. Khorosheva, M. Seibt Influence of the dislocation travel distance on the DLTS spectra of dislocations in Cz-Si Solid State Phenomena Vols.131-133, pp. 175-181 2008

  2. Ivan Bredikhin, S.Bredikhin, A.Aronin, V.Sinitsyn, V.Kveder SOFC anode performance enhancement through nano-structured heterojunction formation Proceedings of the 8th EUROPEAN SOFC FORUM 2008
  3. Kveder V., M.Kittler Dislocations in Silicon and D-band Luminescence for Infrared Light Emitters in “Advances in Light Emitting Materials" Materials Science Forum 590, 29-56 2008

... top


  1. O. Voss, V.V. Kveder, M. Seibt Electrical properties of gold in dislocated silicon phys.stat.sol.(a) 204, 2185-2189 2007

  2. N.N.Kolesnikov, E.B.Borisenko, D.N.Borisenko, V.V.Kveder, R.B.James Recrystallization in ceramic material fabricated from Cd1-xZnxTe Proc. SPIE 6706, 67061B 2007

  3. N.N.Kolesnikov, E.B.Borisenko, D.N.Borisenko, V.V.Kveder, R.B.James Влияние отжига на структуру и эксплуатационные свойства Cd1-xZnxTe из нанопорошка Деформация и разрушение материалов 12, с. 38-42 2007

  4. Колесников Н. Н., Е. Б. Борисенко, Д. Н. Борисенко, В. В. Кведер, В. К. Гартман, Б. А. Гнесин Фазовый переход вюрцит-сфалерит при холодном прессовании нанокристаллических порошков CdTe и Cd1-xZnxTe Журнал функциональных материалов 1, 72-74 2007

... top


  1. M. Seibt, A. Sattler, C. Rudolf, O.Vo?, V. Kveder, W. Schroeter Gettering in Silicon Photovoltaics: Current State and Future Perspectives phys. stat. sol. (a) 203, 696–713 2006

  2. Колесников Н. Н., Е. Б. Борисенко, Д. Н. Борисенко, В. В. Кведер, В. К. Гартман, А. В. Тимонина Керамические материалы из нанокристаллов Cd1-xZnxTe Deformation and Fracture of Materials 1, 394-397 2006

... top


  1. M. Badylevich, V. Kveder, V. Orlov, Yu. Osipyan Influence of magnetic field on the unlocking stress for dislocation motion in Cz-Si depending on pre-annealing time Solid State Phenomena Vols. 108-109 pp. 163-168 2005

  2. S.K.Brantov, V.V.Kveder, N.N.Kuznetzov and V.I.Orlov Silicon Layers Grown On Siliconized Carbon Net: Producing And Properties Solid State Phenomena Vols. 108-109 pp. 503-508 2005

  3. M. Badylevich, V. Kveder, V. Orlov, Yu. Osipyan Spin – resonant change of unlocking stress for dislocations in silicon Phys. Stat. Sol 2, No.6, pp. 1869-1872 2005

  4. V. Kveder, M. Badylevich, W.Schr?ter, M. Seibt, E. Steinman, A. Izotov Silicon light-emitting diodes based on dislocation-related luminescence Phys.St.Sol. (a) 202, No5, 901-910 2005

  5. V. Kveder, M. Badylevich, W.Schr?ter, M. Seibt, E. Steinman, A. Izotov Silicon light-emitting diodes based on dislocation-related luminescence phys. stat. sol. (a) 202, No. 5, 901–910 2005

  6. R. Khalil, V. Kveder, W. Schroter, M. Seibt Early stages of iron precipitation in silicon phys. stat. sol. (c) 2, 1802-1806 2005

  7. M.Seibt, V. Kveder, W.Schroter, O.Voss Structural and electrical properties of metal impurities at dislocations in silicon phys. stat. sol. (a) 202, No. 5, 911–920 2005

  8. O. Voss, V. V. Kveder, W. Schroter, M. Seibt Electrical Properties of Gold at Dislocations in Silicon phys. stat. sol. (c) 2, 1847-1852 2005

  9. Nonmonotonic Variation of the Electrical Conductivity of C60 Fullerene Crystals Dynamically Compressed to 300 kbar as Evidence of Anomalously Strong Reduction of the Energy Barrier of C60 Polymerizati 2005
  10. N.N.Kolesnikov, V.V.Kveder, E.B.Borisenko, D.N.Borisenko, B.A.Gnesin, R.B.James Structure and properties of CdTe ceramics produced through nanopowder compaction Journal of Crystal Growth 285, 339-344 2005

... top


  1. M. Badylevich, Yu. Iunin., V. Kveder, V. Orlov, Yu. Osipyan Influence Magnetic Field on the Critical Stress and Dislocation Mobility in Silicon Solid State Phenomena Vols. 95-96, pp. 433-438. 2004

  2. V.Kveder, V.Badylevich, E.Steinman, A.Izotov, M.Seibt, W.Schr?ter Silicon light emitting diodes based on dislocation luminescemce Appl.Phys.Lett 84 (12) 2106 2004

  3. D.N.Borisenko, N.N.Kolesnikov, M.P.Kulakov, V.V.Kveder Kinetics of the Carbon Nanomaterials Oxidation International Journal of Nanoscience 3, 355-369 2004

... top


  1. Бадылевич М.В., Иунин Ю.Л., Кведер В.В., Орлов В.И., Осипьян Ю.А. Изменение подвижности индивидуальных дислокаций в кремнии стимулированное магнитным полем. ЖЭТФ ЖЭТФ том 124, вып. 3(9), стр. 664-669 2003

  2. M.V.Badylevich, Yu.L.Iunin., V.V.Kveder, V.I.Orlov, Yu.A.Osipyan Effect of a Magnetic Field on the Starting Stress and Mobility of Individual Dislocations in Silicon JETP 97, 601-605 2003

... top


  1. V.Kveder, W.Schroter, M.Seibt, A.Sattler Electrical Activity of Dislocations in Si Decorated by N Solid State Phenomena 82-84, 361-366 2002

  2. Wolfgang Schroter Vitaly Kveder, Henrik Hedemann Electrical Effects of Point Defect Clouds at Dislocations in Silicon Studied by Deep Level Transient Spectroscopy Solid State Phenomena 82-84, 213-218 2002

  3. M.Seibt, A.Doller, V.Kveder, A.Sattler, A.Zozime Platinum Silicide Precipitate Formation during Phosphorus Diffusion Gettering in Silicon Solid State Phenomena 82-84, 411-416 2002

  4. Yu.A. Osip’yan, V.E. Fortov, K.L.Kagan, VV. Kveder, V.I. Kulakov, A.N.Kur’yanchik, R.K.Nikolaev, V.I.Postnov, N.S.Sidorov Conductivity of C60 Fullerene Crystals under Dynamic Compression up to 200 kbar JETP Letters 75 (11), 563–565 2002

  5. Wolfgang Schroter ,Henrik Hedemann ,Vitaly Kveder and Frank Riedel Measurements of energy spectra of extended defects J. Phys.: Condens. Matter 14, 13047–13059 2002

... top


  1. V.Kveder, M.Kittler, W.Schroeter Temperature dependence of the recombination activity at contaminated dislocations in Si: A model describing the different EBIC contrast behaviour Phys.Rev.B 63, 115208 2001

  2. R.A.Dilanyan, S.S.Khasanov, S.I.Bredikhin, A.F.Gurov, V.V.Kveder, Yu.A.Osip'yan, and A.I.Shalynin Phase Transitions and the Structure of the C60 Crystal Doped with Lithium by Electrodiffusion JETP 93, 1239 2001

  3. В.В.Кведер, Э.А.Штейнман, Р.Н.Любовская, С.А.Омельченко, Ю.А.Осипьян Магнитные свойства кристаллов молекулярного комплекса фуллерена C60 с органическим донором 9,9'-транс-бис теллуроксантинил (BTX) Письма ЖЭТФ т.74, в.8,стр.422 2001

  4. С.В.Авдеев, А.В.Баженов, Р.А.Диланян, А.И.Иванов, А.Н.Изотов, А.В.Калмыков, В.В.Кведер, Е.В.Марков, В.П.Никитский, Р.К.Николаев, Ю.А.Осипьян, Г.И.Падалко, Н.С.Сидоров, Э.А.Штейнман Оптические измерения на монокристаллах С60 выращенных в условиях микрогравитации Поверхность №9, с73 2001

  5. V.V.Kveder, E.A.Steinman, R.N.Lyubovskaya, S.A.Omel’chenko, Yu.A.Osipyan Magnetic Properties of Crystals of the Molecular Complex between Fulleren C60 and an Organic Donor 9’9-trans-bis(telluraxanthenil) JETP Letters 74(8), 422-424 2001

... top


  1. S.Bredikhin, S.Scharner , M.Klinger, V.Kveder, B.Red'kin, W.Weppner Nonstoichiometry and electrocoloration due to injection of Li+ and O2- ions into lithium niobate crystals Journal of Applied Physics 88(10), 5687-5694 2000

  2. D.V.Dyachenko-Decov, Yu.L.Iunin, A.N.Izotov, V.V.Kveder, R.K.Nikolaev, V.I.Orlov, Yu.A.Ossipyan, N.S.Sidorov, E.A.Steinman Possible Polimerisation at Dislocations in C60 Crystals Phys.Stat.Sol.(b) 222, 111-119 2000

  3. V.Kveder, W.Schroeter, A.Sattler, M.Seibt Simulation of Al and phosphorus-diffusion gettering in Si Materials Science and Engineering B71, 175-181 2000

  4. S.Bredikhin, S.Scharner, M.Klingler,V.Kveder. B.Red'kin W. Weppner Peculiarity of O and Li electrodiffusion into lithium niobate single crystals Solid State Ionics 135, 737-742 2000

  5. E.A.Steinman , V.V.Kveder, D.V.Konarev, Wang Qin, and H.G.Grimmeiss Charge transfer state of novel molecular complex C26H18Te2 / C60 / CS2 detected in Single Crystals by photoluminescence and ESR Chem.Phys. Lett 2000
  6. E.A.Steinman, S.V.Avdeev, V.B.Efimov, A.I.Ivanov, A.N.Izotov, A.V.Kalmykov, V.V.Kveder, E.V.Markov, V.P.Nikitskii, R.K.Nikolaev, Yu.A.Ossipyan, G.I.Padalko, N.S.Sidorov, A.V.Baxhenov, R.A.Dilanyan, an Optical Characteristics of C60 Single Crystals Grown in Microgravity Conditions J.of Low Temp.Phys 2000
  7. S.Bredikhin, V.Kveder, A.Shalynin, R.Nikolaev Yu.Ossipyan Peculiarity of lithium electrodiffusion into fullerides single crustals. Journal of Ionics 6, N 5-6, p.187-195 2000

  8. W.Schroeter, V.Kveder, M.Seibt, H.Ewe, H.Hedemann, F.Riedel, A.Sattler Atomic structure and electronic states of nickel and copper silicides in silicon Materials Science&Engineering B72, 80-86 2000

  9. M.Seibt, A.Doller, V.Kveder, A.Sattler, A.Zozime Phosphorus Diffusion Gettering of Platinum in Silicon: Formation of Near-Surface Precipitates Phys.Stat.Sol.(b) 222, 327-336 2000

... top


  1. M. Kittler, V.V. Kveder, W. Schroter Temperature dependence of the recombination activity at contaminated dislocations in Si: A model describing the different EBIC contrast behaviour Solid State Phenomena 69, 417-422 1999

  2. A.V. Bazhenov, S.I. Bredikhin, V.V. Kveder, Yu.A. Ossipyan, R.K. Nikolaev, T.N. Fursova, A.I.Shalynin Electronic properties of C60 single crystals doped with lithium by electrodiffusion JETP 89(5), 923-932 1999

  3. E.A.Steinman, V.V.Kveder, V.I.Vdovin, and H.G.Grimmeiss he origin and efficiency of dislocation luminescence in Si and its possible application in optoelectronics Solid State Phenomena vols.69-70, p.23 1999

... top


  1. A.N.Izotov, V.V.Kveder, Yu.A.Osipyan, E.A.Steinman, R.K.Nikolaev, N.S.Sidorov Features of the optical absorption of crystals of the fullerene C60 in the region of the orientational phase transition JETP 87(6), 1205-1213 1998

  2. A.V.Bazhenov, V.V.Kveder, A.A.Maksimov, I.I.Tartakovskii, R.A.Oganyan, Yu.A.Ossipyan, A.I.Shalynin Raman scattering of light and IR absorption in carbon nanotubes JETP 86(5), 1030-1034 1998

  3. V.V. Kveder, V.D. Negrii, E.A. Steinman, A.N. Izotov, Yu.A. Osipyan, R.K. Nikolaev Long-lived excited states and photoluminescence excitation spectra in single crystals of fullerene C60 JETP 86(2), 405-411 1998

  4. V. V.Kveder, V.Negrii, E.Steinman, A.Izotov, Yu.Ossipyan, and R. Nikolaev Долгоживущие возбужденные состояния и спектры возбуждения фотолюминесценци в монокристаллах фуллерена С60 JETP 86, 405 1998

... top


  1. V.D.Negrii, V.V.Kveder, Yu.A.Ossipyan, I.N.Kremenskaya, R.K.Nikolaev Transformations of PL spectra in C60 crystals under laser irradiation at low temperature Phys.Stat.Sol.(b) 199, 587-595 1997

  2. V.V.Kveder, E.A.Steinman, B.J.Narymbetov, L.P.Rozenberg, S.S.Khasanov, R.P.Shibaeva, A.V.Bazhenov, A.V.Gorbunov, M.Yu.Maksimuk, D.V.Konarev, R.N.Lubovskaya, and Yu.A.Osipyan Crystal Structure and Photoluminescence of Single Crystals of Fullerene - 9,9'-trans-bis(telluraxanthenyl) Molecular Complex C26H18Te2*C60*CS2 Chem.Physics 216, 407-415 1997

  3. Kveder, V.V., E.A. Steinman, B.Zh. Narymbetov, S.S. Khasanov, L.P. Rozenberg, R.P. Shibaeva, A.V. Bazhenov, A.V. Gorbunov, M.Yu. Maksimuk, D.V. Konarev, R.N. Lyubovskaya and Yu.A. Ossipyan Crystal structure and photoluminescence of single crystals of fullerene--9,9_'_-{\it trans}-bis (telluraxanthenyl) molecular complex: C26H18Te2\C60\CS2 CHEMICAL PHYSICS Volume 216, No.~3,p.407, published March 20 1997

  4. E.A. Steinman Kveder, V.V., A.V. Bazhenov , R.N. Lyubovskaya Yu.A. Ossipyan, and H.G.Grimmeiss Photoluminescence of single crystals of fullerene--9,9_'_-{\it trans}-bis (telluraxanthenyl) molecular complex: C26H18Te2\C60\CS2 Proceedings of ECS v.4 pp.1200-1205 1997

  5. V.V.Kveder, A.I.Shalynin, E.A.Steinman, A.N.Izotov The Effect of Dislocation on the g-Tenzor of Holes in Dislocation Related 1D Energy Band in Si Solid State Phenomena 57-58, 299-304 1997

... top


  1. E.A.Steinman, V.V.Kveder, H.G.Grimmeiss The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources Solid State Phenomena 47-48 pp.217-222 1996

  2. V.V.Kveder, A.I.Shalynin, E.A.Shteinman, and A.N.Izotov Influence of the splitting of dislocations on the g factor of holes in one-dimensional dislocation band JETP 83 (4), 829 1996

  3. V.V.Kveder, E.A.Steinman, H.G.Grimmeiss Dislocation related Electroluminescence at Room Temperature in Plastically Deformed Silicon Solid State Phenomena 47-48 pp. 419-424 1996

... top


  1. V.V.Kveder, E.A.Steinman, H.G.Grimmeiss The investigation of relaxation in strained Si1-xGex /Si epilayers using photoluminescence J.Appl.Phys 78 (1), 446 1995

  2. V.V.Kveder, E.A.Steinman, S.A.Shevchenko, H.G.Grimmeiss Dislocation related electroluminescence at room temperature in plastically deformed silicon Phys.Rev. B 51(16), 10520-10526 1995

  3. V.Kveder, T.Sekiguchi, K.Sumino Electronic states associated with dislocations in p-type silicon studied by means of electric-dipole-spin-resonance and deep-level-transient-spectroscopy Phys.Rev. B 51(23), 16721-16727 1995

  4. V.V.Kveder, E.A.Steinman, H.G.Grimmeiss Photoluminescence studies of relaxation processes in strained Si1-xGex/Si epilayers J.Appl.Phys 78 No1, 446 1995

  5. N.T.Bagraev, E.V.Vladimirskaya, V.E.Gasumyants, V.I.Kaidanov, V.V.Kveder, L.E.Klyachkin, A.M.Malyarenko, A.I.Shalynin Strong charge correlations in p+ quantum wells on the surface of n-type silicon Phys.Solid.State 37(10), 1655-1658 1995

  6. N.T.Bagraev, L.E.Klyachkin, A.M.Malyarenko, E.I.Chaikina, E.V.Vladimirskaya, V.E.Gasumyants, V.I.Kaidanov, V.V.Kveder, A.I.Shalynin Metal-insulator transition in strongly doped p+ quantum wells on a n-type silicon surface Semiconductors 29(12), 1112-1124 1995

... top


  1. T.Sekiguchi, V.V.Kveder, K.Sumino Hydrogen effect on the optical activity of dislocations in silicon introduced at room temperature J. Appl. Phys 76(12), 7882-7888 1994

  2. T.R.Mchedlidze, V.V.Kveder, J.Jablonski, K.Sumino Electric-Dipole Spin Resonance Study on Extended Defects in Czochralski-Grown Silicon Developed by Thermal Treatment Phys.Rev.B 50(3), 1511 1994

... top


  1. V.A.Chesnakov, V.V.Kveder Formation and growth of lead dendrites in PbF2 during direct current flow JETP Lett 58, 210-214 1993

  2. P.Omling, V.Kveder, B.K.Meyer, K.Oettinger, U.Kaufmann, O.Kordina Optically detected magnetic-resonance observervation of spin-dependent interdefect electron transfer in GaP:(V,S) system Phys.Rev.B 47(19), 12527-12531 1993

  3. V.V.Kveder, E.A.Steinman Influence of Microwave Heating on Dislocation Photoluminescence in Plastically Deformed Germanium Phys.Stat.Sol.(a) 138, 625-630 1993

  4. A.Bazhenov, V.Kveder, L.Krasilnikova, K.Rezchikov Far-Infrared Absorption on Dislocations in Plastically Deformed p-Si Phys.Stat.Sol.(a) 137, 321-326 1993

  5. V.V.Kveder Elictriv-Dipole Spin Resonance on Extended Defects in Silicon Solid State Phenomena 32-33, 279-290 1993

... top


  1. V.V. Kveder, T.R. Mchedlidze Anizotropy and Temperature Dependence of Electric-Dipole Spin Resonance on Dislocations in p-Si JETP(rus) 102,174-186 1992

... top


  1. V.V.Kveder, P.Omling, H.G.Grimmeiss, Yu.A.Osipian Optically detected magnetic resonance of dislocations in silicon Phys.Rev.B 43(8),6569-6572 1991

  2. V.V. Kveder, M.R. Mkrtchan, A.I. Shalynin Problem of microwave absorption in a high-temperature superconducting ceramic in a magnetic field Solid State Physics (Russian) 33(4),1226-1237 1991

... top


  1. M.Wattenbach, C.Kisielowski-Kemmerich, H.Alexander, V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian Electric-dipole spin resonance of dislocations in plastically deformed p-type silicon Phys.Stat.Sol. 158, K49-K53 1990

  2. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin Investigation of one-dimensional defects in Si using the EDSR in Defect Control in Semicond., K.Sumino (ed.), Elsevier Sci.Publ. B.V. (North-Holland) p.1417-1422 1990

  3. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin Relationship between a combined resonance in plastically deformed n-type silicon with a dislocation structure Solid State Physics (Russian) 32(8), 2224-2229 1990

... top


  1. V.V.Kveder, A.E.Koshelev, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin Temperature dependence of conduction by reconstructed dislocations in silicon and nonlinear effects Sov.Phys.JETP 68(1), 104-108 1989

  2. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin Conductivity along dislocations: temperature dependence and nonlinear effects. Combined resonance and structure peculiarities of plastically deformed silicon Solid State Phenom 6-7, 301-308 1989

... top


  1. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin Characteristics of microwave losses in a super-conducting ceramic subjected to a magnetic field JETP Lett.(Russian) 46(Suppl.), 176-179 1987

  2. V.V.Kveder, Yu.A.Osipian Spin-dependent recombination and conductivity as a method for investigation of dislocations in semiconductors Izvesiya Acad. of Sci.USSR-Phys.Ser.(Russian) 51(4), 626-632 1987

  3. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin Combined electron resonance in a one-dimensional dislocation band JETP (Russian) 93(4), 1470-1479 1987

... top


  1. A.V.Bazhenov, V.V.Kveder, L.L.Krasilnikova, A.I.Shalynin Light absorption due to deep dislocation states in silicon Solid State Physics (Russian) 28(1), 230-234 1986

  2. V.V.Kveder, V.Ya.Kravchenko, T.R.Mchedlidze, Yu.A.Osipian, D.E.Khmelnizkii, A.I.Shalynin Combined resonance at dislocations in silicon JETP Lett. (Russian) 43(4), 202-205 1986

... top


  1. V.V.Kveder, Yu.A.Osipian, I.R.Sagdeev, A.I.Shalynin, M.N.Zolotukhin The effect of annealing and hydrogenation on the dislocation conduction in silicon Phys. Stat.Sol.(a) 87, 657-665 1985

  2. V.V.Kveder, R.Labusch Yu.A.Osipian Frequency dependence of the dislocation conduction in Ge and Si Phys.Stat. Sol.(a) 92, 293-302 1985

  3. V.V.Kveder, Yu.A.Osipian, A.I.Shalynin Spin-dependent change in the RF photo conductivity of silicon crystals containing dislocations JETP (Russian) 88(1), 309-317 1985

  4. V.V.Kveder, Yu.A.Osipian Interaction of hydrogen with dislocations in Si", p.395-398 in "Dislocations in Solids Dislocations in Solids p.395-398 1985

... top


  1. V.V.Kveder, Yu.A.Osipian, A.I.Shalynin The exodiffusion of hydrogen in dislocated crystalline silicon Phys.Stat. Sol.(a) 84, 149-156 1984

  2. V.V.Aristov, M.N.Zolotukhin, V.V.Kveder, Yu.A.Osipian, I.I.Snighireva, I.I.Khodos Comparative ESR and DLTS investigations of the annealing process of broken dislocation bonds in silicon Fiz. Tverd. Tela (USSR) 26(5), 1412-1418 1984

... top


  1. Spin-dependent recombination at dislocation dangling bonds in Si Phys.Stat. Sol.(a) 1983
  2. V.V.Kveder, Yu.A.Osipian, I.R.Sagdeev, M.N.Zolotukhin The Effect of annealing on the dislocation dissociation in plastically deformed silicon Phys.Stat.Sol.(a) 76, 485-491 1983

... top


  1. V.V.Kveder, Yu.A.Osipian, W.Schroter, G.Zoth On the energy spectrum of dislocations in silicon Phys.Stat. Sol.(a) 72,701-713 1982

  2. V.V.Kveder, Yu.A.Osipian, M.N.Zolotukhin Influence of hydrogen on dislocation donor and accepter states JETP (Russian) 82(6), 2068-2075 1982

  3. V.V.Kveder, Yu.A.Osipian, A.I.Shalynin Spin-dependent recombination on dislocation dangling bonds in silicon JETP (Russian) 83(2), 699-714 1982

  4. V.V.Kveder, Yu.A.Osipian, A.I.Shalynin Investigation of spin-dependent recombination at dislocations in silicon Fiz. & Tekh. Poluprovodn. 16(8), 1459-1461 1982

  5. V.V.Kveder, Yu.A.Osipian Investigation of dislocations in silicon by the ESR method Fiz. & Tekh. Poluprovodn. 16(11), 1930-1933 1982

... top


  1. V.A.Grazhulis, V.V.Kveder, Yu.A.Osipyan Concerning the annealing of a dislocation EPR signal in silicon Phys. Status Solidi B 103(2), 519-528 1981

  2. V.V.Kveder, Yu.A.Osipian Investigation of dislocations in silicon by the photo-EPR method JETP (Russian) 80(3), 1206-1216 1981

  3. V.V.Kveder, Yu.A.Osipian, M.N.Zolotukhin Investigation of the dislocation spin system in silicon as model of one-dimensional spin chains JETP (Russian) 81(1), 299-307 1981

... top

1980 - 1960

  1. V.A.Grazhulis, V.V.Kveder, V.Yu.Mukhina, Yu.A.Osipian The electronic instability in Si caused by dislocations Solid State Physics (Russian) 22(2), 513-522 1980

  2. V.A. Grazhulis, V.V. Kveder, Yu.A.Osip'yan, Y.H.Lee, H.Kleinhenz, H. van Camp, C.P.Scholes, J.W.Corbett ENDOR of a dislocation center in a deformed silicon Phys. Lett. A 66A (5), 398-400 1978

  3. V.A.Grazhulis, V.V.Kveder, V.Yu.Mukhina Investigation of energy spectrum and kinetic phenomena in dislocated Si crystals (1) Phys.Stat.Sol.(a) 43, 407-415 1977

  4. V.A.Grazhulis, V.V.Kveder, V.Yu.Mukhina Investigation of energy spectrum and kinetic phenomena in dislocated Si crystals (2. Microwave Conductivity) Phys.Stat.Sol.(a) 44, 107-115 1977

  5. V.A.Grazhulis, V.V.Kveder, V.Yu.Mukhina, Yu.A.Osipian Oscillations of conductance in silicon crystals with dislocations Solid State Physics 19(2), 585-588 1977

  6. V.A.Grazhulis, V.V.Kveder, V.Yu.Mukhina, Yu.A.Osipian The high frequency conductance of dislocations in silicon JETP Lett 24(3), 164-166 1976

  7. V.A.Grazhulis, V.V.Kveder, Yu.A.Osipian Influence of spin state of dislocations on the conductivity of silicon crystals JETP Lett 21(12), 708-711 1975

  8. V.V.Kveder, B.Ya.Kotyuzhanskii, L.A.Prozorova Investigation of the beyond-threshold susceptibility in antiferromagnetuc MnCO3 and CsMnF3 in parametric excitation of spin waves JETP 19, 353 1974

  9. S.V.Broude, V.A.Grazhulis, V.V.Kveder, Yu.A.Osipian Investigation of properties of the dislocational EPR spectra in silicon JETP Lett 39(4), 721-725 1974

  10. V.V.Kveder, B.Ya.Kotyuzhanski, L.A.Prozorova Parametric excitation of spin waves in antiferromagnetic MnCO3 JETP 36(6), 1165-1169 1973

... top



  1. PDF Д.А. Агарков, И.Н. Бурмистров, Ф.М. Цыбров, С.И. Бредихин, В.В. Кведер «Мембранно-электродный блок ТОТЭ» Патент на полезную модель, 161096, дата приоритета 17.09.2015, зарегистрирован 21.03.2015, срок действия 17.09.2025 (2016)

... top

... top

... top

Participation in grants


  1. «Разработка лабораторной масштабируемой технологии изготовления ТОТЭ планарной конструкции и концепции создания на их базе энергетических установок различного назначения и структуры, включая гибридные, с изготовлением и испытаниями маломасштабного экспериментального образца энергоустановки мощностью 500 - 2000 Вт» Минобрнауки РФ, соглашение 14.610.21.0007 2014-2016, 164.6 млн.руб., (2014)
  2. «Исследование механизмов токогенерирующих электрохимических реакций и переноса заряда в микро и нано структурированных композиционных электродах твердооксидных топливных элементов» РФФИ, 14-29-04031 офи_м 2014-2016, 2.0 млн.руб., (2014)

... top


  1. «Новые материалы и технологии твердооксидных топливных элементов, керамических мембран и высокотемпературных электролизеров газов» Грант Правительства Российской Федерации № 14.B25.31.0018 2013-2015, 63.51 млн.руб., (2013)