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LSDS ISSP RAS
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Shevchenko Svetlana Antonovna

E-mail: shevchen@issp.ac.ru

phone: 2-83-43

Working in:224 ГЛК

Position:senior researcher

Work in LSDS since: 1965-05-05

Scientific degree:Dr.S.

Shevchenko Svetlana Antonovna

Scientific Biography

Svetlana Antonovna Shevchenko was born in Dnepropetrovsk, Ukrainian Soviet Socialist Republic 12 of December, 1938.
1956 -1962 – Student of the Physics Department of Moscow Lomonosov State University, Moscow, Russia
1962 - Graduation from the Physics Department of Moscow Lomonosov State University, Moscow, Russia
1962 -1965 – Post-graduate in Lebedev Physical Institute of Academy of Sciences of the USSR
1965 -1980 – Junior Scientist in the Institute of Solid State Physics of the Russian Academy of Science
In 1967 she awarded the degree "Candidate of physical and mathematical sciences" (Ph.D)
1980 - present - Senior Scientist in the Institute of Solid State Physics of the Russian Academy of Science
In 2004 she awarded the degree "Doctor of physical and mathematical sciences" (Doctor of Science).

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Scientific intersts

• Influence of dislocations on electronic subsystem in Semiconductors.
• Electric conductivity along both isolated dislocations and dislocation networks in Semiconductors.
• Thermal and deformation induced point defects in Semiconductors.
• Reseach methods: electrical conductivity, Hall effect, photoconductivity, photoluminescence and deep level transient spectroscopy.

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Selected publications

2014

  1. С.А. Шевченко, А.Н. Терещенко, А.А. Мазилкин Взаимодействие многозарядных примесей с дислокациями в монокристаллах германи Известия высших учебных заведений. Материалы электронной техники т.17, №3,с. 211-216 2014

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2013

  1. С.А. Шевченко, А.И. Колюбакин Исследование методом DLTS пластически деформированного германия n-типа после легирования медью Физика и Техника Полупроводников т. 47, №6, с. 838-844 2013

  2. S.A. Shevchenko and A.I. Kolyubakin DLTS Study of Plastically Deformed Copper-Doped n-Type Germanium Semiconductors Vol. 47, No. 6, pp. 849–855 2013

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2010

  1. S. Shevchenko, A. Tereshchenko Dislocation states and deformation-induced point defects in plastically deformed germanium Solid State Phenomena 156-158, 289 2010

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2009

  1. S.A. Shevchenko, A.N. Tereshchenko Dislocation photoluminescence in plastically deformed germanium Physica B: Condensed Matter 404, 4540 2009

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2008

  1. S. Shevchenko and A. Tereshchenko Dislocation photoluminescence in silicon and germanium Solid State Phenomena 131-133, 583 2008

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2007

  1. S.A. Shevchenko and A.N. Tereshchenko Photoluminescence in germanium with a quasi-equilibrium dislocation structure Physics of the Solid State 49, No.1, 28-33 2007

  2. S.A. Shevchenko and A.N. Tereshchenko Peculiarities of dislocation photoluminescence in germanium with quasi-equilibrium dislocation structure Phys.stat.sol.(c) 4, 2898-2902 2007

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2005

  1. S.A. Shevchenko and A. N. Izotov Dislocation photoluminescence in silicon crystals of various impurity contents Phys. Stat. Sol. (c) 2, No. 6, 1827 2005

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2003

  1. S.A. Shevchenko and A. N. Izotov Dislocation-induced photoluminescence in silicon crystals of various impurity composition Physics of the Solid State 45, No. 2, 259-265 2003

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2002

  1. A.P. Mel’nikov, Yu.A. Gurvich, S.A. Shevchenko, L.N. Shestakov and L. I. Men’shikov New mechanism of impurity conduction in lightly doped crystalline noncompensated silicon JETP Letters 75, No. 3, 155-158 2002

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2000

  1. S.A. Shevchenko Influence of annealing on dislocation-related electrical conductivity of germanium Semiconductors 34, No. 5, 527-533 2000

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1999

  1. S.A.Shevchenko Electroconductivity of germanium with dislocation grids Zh.Eksp.Teor.Phys.( JETP) 115, N1, p.115 1999

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1997

  1. V.G.Abramov, E.N.Rumanov, D.V.Strunin, S.A.Shevchenko Current fluctuations similar the critical opalescence Dokladi Academii Nauk 353, 177 1997

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1995

  1. V.V.Kveder, E.A.Steinman, S.A.Shevchenko, H.G.Grimmeiss Dislocation related electroluminescence at room temperature in plastically deformed silicon Phys.Rev. B 51(16), 10520-10526 1995

  2. V.Sedykh, G.K.Strukova, R.A.Dilanyan, I.S.Smirnova, S.A.Shevchenko, V.Sh.Shekhtman A study of the new compound Y4Ba3FeO11-y Applied Physics A 60, 255 1995

  3. S.A.Shevchenko and A.N.Izotov Structure of the photoluminescence spectra in the vicinity of the lines D1 and D2 in plastically deformed Si Phys.Stat.Sol.(a) 148, K1 1995

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1994

  1. S.A.Shevchenko, Yu.A.Ossipyan T.R.Mchedlidze E.A.Steinman, R.A.Batto Defect states in Si containing dislocation nets Physica Status Solidi (a) v.146, 745 1994

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1992

  1. A.N.Izotov, A.I.Kolyubakin, S.A.Shevchenko, E.A.Steinman Photoluminescence and splitting of dislocations in germanium Phys.Stat.Sol.(a) 130, 193 1992

  2. L.A.Klinkova, N.V.Barkovskii, D.U.Batova, A.I.Kolyubakin, S.A.Shevchenko On the character of barrium cuprates conductivity Superconductivity: physics, chemistry, technics 5, 1262 1992

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1991

  1. M.P.Kulakov, N.N.Kolesnikov, Yu.A.Ossipyan, S.A.Shevchenko Hall effect in single crystals Tl2Ba2CaCu2Ox Superconductivity: Physics, chemistry, technics 4, 957 1991

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