Steinman Eduard Aleksandrovich

E-mail: steinman@issp.ac.ru

phone: 2-83-44

Working in:116 ГЛК

Position:leading senior researcher

Work in LSDS since: 1967-02-28

Scientific degree:Dr.S.

Steinman Eduard Aleksandrovich

Scientific Biography

Eduard Steinman born Yaroslavl, USSR Russian at June 20, 1941
September 1960- June 1966
Student of Moscow State University, (faculty of Physics)
Awarded Engineering degree (equivalent of Master degree) in
Physics (Diploma X No:458169, January 22 1966)
Diploma thesis: "The calculation of superfine correlation in
mu-meson H atom".
February 1967- October 1974
Institute of Solid State Physics of Academy of Sciences of the USSR.
November. 1974 Awarded the degree "Candidate of sciences" in physics
and mathematics (equivalent of Ph.D.) (Diploma MKD No:020065)
Thesis: "Investigation of optical properties of dislocations
in A2B6 semiconductors".
November 1974- September 1982
Scientific researcher in Institute of Solid State Physics
of Academy of Sciences of the USSR.
September 1982- till now
Leading Scientific Researcher in Institute of Solid State Physics
of Academy of Sciences of Russia.
May, 2002 Awarded the degree "Doctor of sciences" in physics
and mathematics, Thesis: “Optical properties of dislocations in semiconductors”.
(Diploma DK No: 015577)

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VISITING FELLOWSHIPS

1993 - 1999 Department of Solid State Physics of the University of Lund, Sweden, 12 months on the whole in several short visits
1998 – September, Retherford laboratory, Cambridge, UK, One month visit
2000 – September, UCL, UK, One month visit
2002 – February, Institute Physics and Astronomy University of Aarhus, Denmark, One month visit
2006 – May, UCL, UK, One month visit

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Selected publications

2008

  1. E.A. Steinman, A.N. Tereshchenko, N.V. Abrosimov The Unusual Temperature Shift of Dislocation Related D1/D2 PL Bands in Donor Doped Silicon Solid State Phenomena Vols.131-133 (2008) pp.607-612 2008

  2. A.N. Tereshchenko, E.A.Steinman Pecularities of dislocation related D1/D2 bands behavior under copper contamination in silicon Solid State Phenomena Vols.131-133 (2008) pp.213-218 2008

  3. Steinman E.A., A.J. Kenyon, A.N. Tereshchenko Time-resolved measurements of dislocation-related photoluminescence bands in silicon Semicond. Sci. Technol 23, 025010 2008

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2007

  1. Э.А.Штейнман, А.Н.Терещенко, В.Я.Резник Структура и излучательные свойства дислокаций, возникающих при росте кислородных преципитатов в кремнии Поверхность. Рентгеновские, синхротронные и нейтронные исследования №6 с.1-6 2007

  2. E.A. Steinman, A.N.Tereshchenko, V.Ya.Reznik, R.J.Falster The radiative properties of dislocations generated around oxygen precipitates in Si pss (a), 204, No.7, 2238 2007

  3. E.A. Steinman, A.N.Tereshchenko Influence of Cu contamination on dislocation related luminescence pss (c), No.8, 3095 2007

  4. О.В. Феклисова, А.Н. Терещенко, Э.А. Штейнман, Е.Б. Якимов Исследования электрических и оптических свойств кремния, содержащего кислородные преципитаты Повехность, Рентгеновские, синхротронные и нейтронные исследования, №7, с.38-41 2007

  5. E.A.Shteinman, A.N.Tereshchenko, V.Ya.Reznik Structure and radiation properties of dislocations arising during oxygen precipitates growth in silicon J.of Surface Investigations. X-ray, Synchrotron and Neutron Techniques Vol. 1, No. 3, pp. 318-322 2007

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2005

  1. R.B.G. Kramer, V.S. Egorov, V.A. Gasparov, A.G.M. Jansen, and W. Joss Direct observation of Condon domains in silver by Hall probes Physical Review Letters 95, 267209 2005

  2. E.A. Steinman, A.N. Tereshchenko, V.I. Orlov, and F. Kirscht Fine Structure of Dislocation Related PL Bands D1 and D2 in Silicon Solid State Phenomena Vols. 108-109 pp. 767-772 2005

  3. V. Kveder, M. Badylevich, W.Schr?ter, M. Seibt, E. Steinman, A. Izotov Silicon light-emitting diodes based on dislocation-related luminescence Phys.St.Sol. (a) 202, No5, 901-910 2005

  4. Э.А. Штейнман Модификация центров дислокационной люминесценции в кремнии под влиянием кислорода ФТТ 47 в.1 , 9 2005

  5. E.A. Steinman, A.N. Tereshchenko, V.I. Vdovin, A.Misiuk DISLOCATION RELATED PL OF MULTI-STEP ANNEALED CZ-SI SAMPLES Solid State Phenomena v. 108-109, pp.773-778 2005

  6. E.A.Steinman of oxygen on the dislocation related centers in silicon Phys.St.Sol. (c) 2, No 6, 1837 2005

  7. E.A.Steinman Oxygen-Induced Modification of Dislocation Luminescence Centers in Silicon Physics of the solid state Vol.47, No 1 pp 5-8 2005

  8. V. Kveder, M. Badylevich, W.Schr?ter, M. Seibt, E. Steinman, A. Izotov Silicon light-emitting diodes based on dislocation-related luminescence phys. stat. sol. (a) 202, No. 5, 901–910 2005

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2004

  1. M. Acciarri, S. Binetti, O.V.Feklisova, E.A.Steinman and E.B.Yakimov Electrical and optical properties of dislocations generated under pure conditions Solid State Phenomena 95-96 p.453 2004

  2. V.Kveder, V.Badylevich, E.Steinman, A.Izotov, M.Seibt, W.Schr?ter Silicon light emitting diodes based on dislocation luminescemce Appl.Phys.Lett 84 (12) 2106 2004

  3. Э.А. Штейнман, В.И. Вдовин, А.Н.Изотов, Ю.Н Пархоменко, А.Ф.Борун Фотолюминесценция и структурные дефекты слоев кремния, имплантированных ионами железа ФТТ 46 в.1 26 2004

  4. В.С.Аврутин, Ю.А.Агафонов, А.Ф.Вяткин, В.И.Зиненко, Н.Ф.Изюмская, Д.В.Иржак, Д.В.Рощупкин, Э.А.Штейнман, В.И.Вдовин, Т.Г.Югова Низкотемпературная релаксация упругих напряжений в SiGe/Si- гетероструктурах, облученных ионами Ge+ ФТП том 38, вып.3 2004

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2003

  1. A.J. Kenyon, E.A. Steinman, C.W. Pitt, D.E. Hole, and V.I. Vdovin The Origin Of The 0.78 eV Luminescence Band In Dislocated Silicon J.Phys.: Condensed Matter v.15 No 39. p.S2843 2003

  2. P.I.Gaiduk, J.Lundsgaard Hansen, A.Nylandsted Larsen, E.Steinman in MBE-grown SiGe alloys implanted in situ with Ge+ ions Phys.Rev.B 67 235310 2003

  3. V.B.Efimov, A.N.Izotov, E.A.Steinman Preparation and study physical proper- ties of 1-D avd 2-D polymerised C60 monocrystals J. of fullerens, nanotubes and carbon nanostructures vol. 12 2003

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2002

  1. V.S.Avrutin, N.F.Izyumskaya A.F.Vyatkin, V.I.Zinenko, Yu.A.Agafonov, D.V.Irzhak, D.V.Roshchupkin,E.A.Steinman, V.I.Vdovin, and T.G.Yugova Low-Temperature Strain relaxation in ion-irradiate Pseudomorphic SiGe/Si Structures Materials Science and Engineering B89 350-354 2002

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2001

  1. В.В.Кведер, Э.А.Штейнман, Р.Н.Любовская, С.А.Омельченко, Ю.А.Осипьян Магнитные свойства кристаллов молекулярного комплекса фуллерена C60 с органическим донором 9,9'-транс-бис теллуроксантинил (BTX) Письма ЖЭТФ т.74, в.8,стр.422 2001

  2. С.В.Авдеев, А.В.Баженов, Р.А.Диланян, А.И.Иванов, А.Н.Изотов, А.В.Калмыков, В.В.Кведер, Е.В.Марков, В.П.Никитский, Р.К.Николаев, Ю.А.Осипьян, Г.И.Падалко, Н.С.Сидоров, Э.А.Штейнман Оптические измерения на монокристаллах С60 выращенных в условиях микрогравитации Поверхность №9, с73 2001

  3. V.V.Kveder, E.A.Steinman, R.N.Lyubovskaya, S.A.Omel’chenko, Yu.A.Osipyan Magnetic Properties of Crystals of the Molecular Complex between Fulleren C60 and an Organic Donor 9’9-trans-bis(telluraxanthenil) JETP Letters 74(8), 422-424 2001

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2000

  1. D.V.Dyachenko-Decov, Yu.L.Iunin, A.N.Izotov, V.V.Kveder, R.K.Nikolaev, V.I.Orlov, Yu.A.Ossipyan, N.S.Sidorov, E.A.Steinman Possible Polimerisation at Dislocations in C60 Crystals Phys.Stat.Sol.(b) 222, 111-119 2000

  2. E.A.Steinman , V.V.Kveder, D.V.Konarev, Wang Qin, and H.G.Grimmeiss Charge transfer state of novel molecular complex C26H18Te2 / C60 / CS2 detected in Single Crystals by photoluminescence and ESR Chem.Phys. Lett 2000
  3. E.A.Steinman, S.V.Avdeev, V.B.Efimov, A.I.Ivanov, A.N.Izotov, A.V.Kalmykov, V.V.Kveder, E.V.Markov, V.P.Nikitskii, R.K.Nikolaev, Yu.A.Ossipyan, G.I.Padalko, N.S.Sidorov, A.V.Baxhenov, R.A.Dilanyan, an Optical Characteristics of C60 Single Crystals Grown in Microgravity Conditions J.of Low Temp.Phys 2000

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1999

  1. E.A.Steinman, V.V.Kveder, V.I.Vdovin, and H.G.Grimmeiss he origin and efficiency of dislocation luminescence in Si and its possible application in optoelectronics Solid State Phenomena vols.69-70, p.23 1999

  2. E.A.Steinman, V.I.Vdovin, T.G.Yugova, V.S.Avrutin, and N.F.Izyumskaya Dislocation structure and photoluminescence of partially relaxed SiGe layers on Si(001) substrates Semicond.Sci.Technol 14, N 6 pp582-586 1999

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1998

  1. A.N.Izotov, V.V.Kveder, Yu.A.Osipyan, E.A.Steinman, R.K.Nikolaev, N.S.Sidorov Features of the optical absorption of crystals of the fullerene C60 in the region of the orientational phase transition JETP 87(6), 1205-1213 1998

  2. V.V. Kveder, V.D. Negrii, E.A. Steinman, A.N. Izotov, Yu.A. Osipyan, R.K. Nikolaev Long-lived excited states and photoluminescence excitation spectra in single crystals of fullerene C60 JETP 86(2), 405-411 1998

  3. V. V.Kveder, V.Negrii, E.Steinman, A.Izotov, Yu.Ossipyan, and R. Nikolaev Долгоживущие возбужденные состояния и спектры возбуждения фотолюминесценци в монокристаллах фуллерена С60 JETP 86, 405 1998

  4. E.A.Steinman, H.G.Grimmeiss Magnesium-Related Luminescence in Silicon Semicond. Sci.Technol 13 p.1-5 1998

  5. E.A.Steinman, H.G.Grimmeiss Dislocation related luminescence properties of silicon Semicond. Sci.Technol 13 p.124-129 1998

  6. I.O.Bashkin, A.I.Izotov, A.P.Moravsky, V.D.Negrii, R.K.Nikolaev, Yu.A.Ossipyan, E.G.Ponyatovsky, and E.A.Steinman Photoluminescence of C60 crystals polymerized under high pressure Mol.Mat v.10, pp.119-124 1998

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1997

  1. V.V.Kveder, E.A.Steinman, B.J.Narymbetov, L.P.Rozenberg, S.S.Khasanov, R.P.Shibaeva, A.V.Bazhenov, A.V.Gorbunov, M.Yu.Maksimuk, D.V.Konarev, R.N.Lubovskaya, and Yu.A.Osipyan Crystal Structure and Photoluminescence of Single Crystals of Fullerene - 9,9'-trans-bis(telluraxanthenyl) Molecular Complex C26H18Te2*C60*CS2 Chem.Physics 216, 407-415 1997

  2. Kveder, V.V., E.A. Steinman, B.Zh. Narymbetov, S.S. Khasanov, L.P. Rozenberg, R.P. Shibaeva, A.V. Bazhenov, A.V. Gorbunov, M.Yu. Maksimuk, D.V. Konarev, R.N. Lyubovskaya and Yu.A. Ossipyan Crystal structure and photoluminescence of single crystals of fullerene--9,9_'_-{\it trans}-bis (telluraxanthenyl) molecular complex: C26H18Te2\C60\CS2 CHEMICAL PHYSICS Volume 216, No.~3,p.407, published March 20 1997

  3. Bashkin I.O., Izotov A.N., Moravsky A.P., Negrii V.D., Nikolaev R.K., Ossipian Yu.A., Ponyatovsky E.G., and Steinman E.A. Photoluminescence of solid C60 polymerized under high pressure Chem.Phys.Lett v272 p.32 1997

  4. E.A. Steinman Kveder, V.V., A.V. Bazhenov , R.N. Lyubovskaya Yu.A. Ossipyan, and H.G.Grimmeiss Photoluminescence of single crystals of fullerene--9,9_'_-{\it trans}-bis (telluraxanthenyl) molecular complex: C26H18Te2\C60\CS2 Proceedings of ECS v.4 pp.1200-1205 1997

  5. V.V.Kveder, A.I.Shalynin, E.A.Steinman, A.N.Izotov The Effect of Dislocation on the g-Tenzor of Holes in Dislocation Related 1D Energy Band in Si Solid State Phenomena 57-58, 299-304 1997

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1996

  1. E.A.Steinman, V.V.Kveder, H.G.Grimmeiss The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources Solid State Phenomena 47-48 pp.217-222 1996

  2. V.V.Kveder, A.I.Shalynin, E.A.Shteinman, and A.N.Izotov Influence of the splitting of dislocations on the g factor of holes in one-dimensional dislocation band JETP 83 (4), 829 1996

  3. V.V.Kveder, E.A.Steinman, H.G.Grimmeiss Dislocation related Electroluminescence at Room Temperature in Plastically Deformed Silicon Solid State Phenomena 47-48 pp. 419-424 1996

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1995

  1. V.V.Kveder, E.A.Steinman, H.G.Grimmeiss The investigation of relaxation in strained Si1-xGex /Si epilayers using photoluminescence J.Appl.Phys 78 (1), 446 1995

  2. V.V.Kveder, E.A.Steinman, S.A.Shevchenko, H.G.Grimmeiss Dislocation related electroluminescence at room temperature in plastically deformed silicon Phys.Rev. B 51(16), 10520-10526 1995

  3. V.V.Kveder, E.A.Steinman, H.G.Grimmeiss Photoluminescence studies of relaxation processes in strained Si1-xGex/Si epilayers J.Appl.Phys 78 No1, 446 1995

  4. И.М.Шмытько.А.Н.Изотов.Э.А.Штейнман.Н.С.Афоникова Деформационно стимулированные фазовые переходы в монокристаллах кремния ЖЭТФ 61 в.11. стр.906-910 1995

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1994

  1. S.A.Shevchenko, Yu.A.Ossipyan T.R.Mchedlidze E.A.Steinman, R.A.Batto Defect states in Si containing dislocation nets Physica Status Solidi (a) v.146, 745 1994

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1993

  1. V.V.Kveder, E.A.Steinman Influence of Microwave Heating on Dislocation Photoluminescence in Plastically Deformed Germanium Phys.Stat.Sol.(a) 138, 625-630 1993

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