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LSDS ISSP RAS
NiO-YSZ Anode
Solid oxyde fuel cell: from the side of the Ni-YSZ cermet anode

Tereshchenko Alexey Nikolaevich

E-mail: tan@issp.ac.ru

phone: 2-83-44

Working in:116 ГЛК

Position:senior researcher

Work in LSDS since: 2004-01-19

Scientific degree:PhD

Tereshchenko Alexey Nikolaevich

Selected publications

2014

  1. С.А. Шевченко, А.Н. Терещенко, А.А. Мазилкин Взаимодействие многозарядных примесей с дислокациями в монокристаллах германи Известия высших учебных заведений. Материалы электронной техники т.17, №3,с. 211-216 2014

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2010

  1. S. Shevchenko, A. Tereshchenko Dislocation states and deformation-induced point defects in plastically deformed germanium Solid State Phenomena 156-158, 289 2010

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2009

  1. S.A. Shevchenko, A.N. Tereshchenko Dislocation photoluminescence in plastically deformed germanium Physica B: Condensed Matter 404, 4540 2009

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2008

  1. S. Shevchenko and A. Tereshchenko Dislocation photoluminescence in silicon and germanium Solid State Phenomena 131-133, 583 2008

  2. E.A. Steinman, A.N. Tereshchenko, N.V. Abrosimov The Unusual Temperature Shift of Dislocation Related D1/D2 PL Bands in Donor Doped Silicon Solid State Phenomena Vols.131-133 (2008) pp.607-612 2008

  3. A.N. Tereshchenko, E.A.Steinman Pecularities of dislocation related D1/D2 bands behavior under copper contamination in silicon Solid State Phenomena Vols.131-133 (2008) pp.213-218 2008

  4. Steinman E.A., A.J. Kenyon, A.N. Tereshchenko Time-resolved measurements of dislocation-related photoluminescence bands in silicon Semicond. Sci. Technol 23, 025010 2008

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2007

  1. S.A. Shevchenko and A.N. Tereshchenko Photoluminescence in germanium with a quasi-equilibrium dislocation structure Physics of the Solid State 49, No.1, 28-33 2007

  2. S.A. Shevchenko and A.N. Tereshchenko Peculiarities of dislocation photoluminescence in germanium with quasi-equilibrium dislocation structure Phys.stat.sol.(c) 4, 2898-2902 2007

  3. E.A. Steinman, A.N.Tereshchenko, V.Ya.Reznik, R.J.Falster The radiative properties of dislocations generated around oxygen precipitates in Si pss (a), 204, No.7, 2238 2007

  4. E.A. Steinman, A.N.Tereshchenko Influence of Cu contamination on dislocation related luminescence pss (c), No.8, 3095 2007

  5. О.В. Феклисова, А.Н. Терещенко, Э.А. Штейнман, Е.Б. Якимов Исследования электрических и оптических свойств кремния, содержащего кислородные преципитаты Повехность, Рентгеновские, синхротронные и нейтронные исследования, №7, с.38-41 2007

  6. E.A.Shteinman, A.N.Tereshchenko, V.Ya.Reznik Structure and radiation properties of dislocations arising during oxygen precipitates growth in silicon J.of Surface Investigations. X-ray, Synchrotron and Neutron Techniques Vol. 1, No. 3, pp. 318-322 2007

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2005

  1. E.A. Steinman, A.N. Tereshchenko, V.I. Orlov, and F. Kirscht Fine Structure of Dislocation Related PL Bands D1 and D2 in Silicon Solid State Phenomena Vols. 108-109 pp. 767-772 2005

  2. E.A. Steinman, A.N. Tereshchenko, V.I. Vdovin, A.Misiuk DISLOCATION RELATED PL OF MULTI-STEP ANNEALED CZ-SI SAMPLES Solid State Phenomena v. 108-109, pp.773-778 2005

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