en ru

ЛСДС ИФТТ РАН
Time of flight SIMS
Блок управления xy-столиком для времяпрлетного масспектрометра

Шалынин Александр Иванович

Электронная почта: shalynin@issp.ac.ru

телефон: 2-19-84
2-82-02
2-83-01

Работает в:118 ГЛК

Позиция:с.н.с.

Работает в ЛСДС c: 1984-11-01

Научные степени:к.ф.-м.н.

Шалынин Александр Иванович

Избранные публикации

2001

  1. R.A.Dilanyan, S.S.Khasanov, S.I.Bredikhin, A.F.Gurov, V.V.Kveder, Yu.A.Osip'yan, and A.I.Shalynin Phase Transitions and the Structure of the C60 Crystal Doped with Lithium by Electrodiffusion JETP 93, 1239 2001

... наверх

2000

  1. S.Bredikhin, V.Kveder, A.Shalynin, R.Nikolaev Yu.Ossipyan Peculiarity of lithium electrodiffusion into fullerides single crustals. Journal of Ionics 6, N 5-6, p.187-195 2000

... наверх

1999

  1. A.V. Bazhenov, S.I. Bredikhin, V.V. Kveder, Yu.A. Ossipyan, R.K. Nikolaev, T.N. Fursova, A.I.Shalynin Electronic properties of C60 single crystals doped with lithium by electrodiffusion JETP 89(5), 923-932 1999

... наверх

1998

  1. A.V.Bazhenov, V.V.Kveder, A.A.Maksimov, I.I.Tartakovskii, R.A.Oganyan, Yu.A.Ossipyan, A.I.Shalynin Raman scattering of light and IR absorption in carbon nanotubes JETP 86(5), 1030-1034 1998

... наверх

1997

  1. V.V.Kveder, A.I.Shalynin, E.A.Steinman, A.N.Izotov The Effect of Dislocation on the g-Tenzor of Holes in Dislocation Related 1D Energy Band in Si Solid State Phenomena 57-58, 299-304 1997

... наверх

1996

  1. V.V.Kveder, A.I.Shalynin, E.A.Shteinman, and A.N.Izotov Influence of the splitting of dislocations on the g factor of holes in one-dimensional dislocation band JETP 83 (4), 829 1996

... наверх

1995

  1. N.T.Bagraev, E.V.Vladimirskaya, V.E.Gasumyants, V.I.Kaidanov, V.V.Kveder, L.E.Klyachkin, A.M.Malyarenko, A.I.Shalynin Strong charge correlations in p+ quantum wells on the surface of n-type silicon Phys.Solid.State 37(10), 1655-1658 1995

  2. N.T.Bagraev, L.E.Klyachkin, A.M.Malyarenko, E.I.Chaikina, E.V.Vladimirskaya, V.E.Gasumyants, V.I.Kaidanov, V.V.Kveder, A.I.Shalynin Metal-insulator transition in strongly doped p+ quantum wells on a n-type silicon surface Semiconductors 29(12), 1112-1124 1995

... наверх

1991

  1. V.V. Kveder, M.R. Mkrtchan, A.I. Shalynin Problem of microwave absorption in a high-temperature superconducting ceramic in a magnetic field Solid State Physics (Russian) 33(4),1226-1237 1991

... наверх

1990

  1. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin Investigation of one-dimensional defects in Si using the EDSR in Defect Control in Semicond., K.Sumino (ed.), Elsevier Sci.Publ. B.V. (North-Holland) p.1417-1422 1990

  2. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin Relationship between a combined resonance in plastically deformed n-type silicon with a dislocation structure Solid State Physics (Russian) 32(8), 2224-2229 1990

... наверх

1989

  1. V.V.Kveder, A.E.Koshelev, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin Temperature dependence of conduction by reconstructed dislocations in silicon and nonlinear effects Sov.Phys.JETP 68(1), 104-108 1989

  2. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin Conductivity along dislocations: temperature dependence and nonlinear effects. Combined resonance and structure peculiarities of plastically deformed silicon Solid State Phenom 6-7, 301-308 1989

... наверх

1987

  1. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin Characteristics of microwave losses in a super-conducting ceramic subjected to a magnetic field JETP Lett.(Russian) 46(Suppl.), 176-179 1987

  2. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin Combined electron resonance in a one-dimensional dislocation band JETP (Russian) 93(4), 1470-1479 1987

... наверх

1986

  1. A.V.Bazhenov, V.V.Kveder, L.L.Krasilnikova, A.I.Shalynin Light absorption due to deep dislocation states in silicon Solid State Physics (Russian) 28(1), 230-234 1986

  2. V.V.Kveder, V.Ya.Kravchenko, T.R.Mchedlidze, Yu.A.Osipian, D.E.Khmelnizkii, A.I.Shalynin Combined resonance at dislocations in silicon JETP Lett. (Russian) 43(4), 202-205 1986

... наверх

1985

  1. V.V.Kveder, Yu.A.Osipian, I.R.Sagdeev, A.I.Shalynin, M.N.Zolotukhin The effect of annealing and hydrogenation on the dislocation conduction in silicon Phys. Stat.Sol.(a) 87, 657-665 1985

  2. V.V.Kveder, Yu.A.Osipian, A.I.Shalynin Spin-dependent change in the RF photo conductivity of silicon crystals containing dislocations JETP (Russian) 88(1), 309-317 1985

... наверх

1984

  1. V.V.Kveder, Yu.A.Osipian, A.I.Shalynin The exodiffusion of hydrogen in dislocated crystalline silicon Phys.Stat. Sol.(a) 84, 149-156 1984

... наверх

1982

  1. V.V.Kveder, Yu.A.Osipian, A.I.Shalynin Spin-dependent recombination on dislocation dangling bonds in silicon JETP (Russian) 83(2), 699-714 1982

  2. V.V.Kveder, Yu.A.Osipian, A.I.Shalynin Investigation of spin-dependent recombination at dislocations in silicon Fiz. & Tekh. Poluprovodn. 16(8), 1459-1461 1982

... наверх

... наверх

... наверх

... наверх