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LSDS ISSP RAS
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Shalynin Alexander Ivanovich

E-mail: shalynin@issp.ac.ru

phone: 2-19-84
2-82-02
2-83-01

Working in:118

Position:senior researcher

Work in LSDS since: 1984-11-01

Scientific degree:PhD

Shalynin Alexander Ivanovich

Selected publications

2001

  1. R.A.Dilanyan, S.S.Khasanov, S.I.Bredikhin, A.F.Gurov, V.V.Kveder, Yu.A.Osip'yan, and A.I.Shalynin Phase Transitions and the Structure of the C60 Crystal Doped with Lithium by Electrodiffusion JETP 93, 1239 2001

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2000

  1. S.Bredikhin, V.Kveder, A.Shalynin, R.Nikolaev Yu.Ossipyan Peculiarity of lithium electrodiffusion into fullerides single crustals. Journal of Ionics 6, N 5-6, p.187-195 2000

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1999

  1. A.V. Bazhenov, S.I. Bredikhin, V.V. Kveder, Yu.A. Ossipyan, R.K. Nikolaev, T.N. Fursova, A.I.Shalynin Electronic properties of C60 single crystals doped with lithium by electrodiffusion JETP 89(5), 923-932 1999

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1998

  1. A.V.Bazhenov, V.V.Kveder, A.A.Maksimov, I.I.Tartakovskii, R.A.Oganyan, Yu.A.Ossipyan, A.I.Shalynin Raman scattering of light and IR absorption in carbon nanotubes JETP 86(5), 1030-1034 1998

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1997

  1. V.V.Kveder, A.I.Shalynin, E.A.Steinman, A.N.Izotov The Effect of Dislocation on the g-Tenzor of Holes in Dislocation Related 1D Energy Band in Si Solid State Phenomena 57-58, 299-304 1997

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1996

  1. V.V.Kveder, A.I.Shalynin, E.A.Shteinman, and A.N.Izotov Influence of the splitting of dislocations on the g factor of holes in one-dimensional dislocation band JETP 83 (4), 829 1996

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1995

  1. N.T.Bagraev, E.V.Vladimirskaya, V.E.Gasumyants, V.I.Kaidanov, V.V.Kveder, L.E.Klyachkin, A.M.Malyarenko, A.I.Shalynin Strong charge correlations in p+ quantum wells on the surface of n-type silicon Phys.Solid.State 37(10), 1655-1658 1995

  2. N.T.Bagraev, L.E.Klyachkin, A.M.Malyarenko, E.I.Chaikina, E.V.Vladimirskaya, V.E.Gasumyants, V.I.Kaidanov, V.V.Kveder, A.I.Shalynin Metal-insulator transition in strongly doped p+ quantum wells on a n-type silicon surface Semiconductors 29(12), 1112-1124 1995

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1991

  1. V.V. Kveder, M.R. Mkrtchan, A.I. Shalynin Problem of microwave absorption in a high-temperature superconducting ceramic in a magnetic field Solid State Physics (Russian) 33(4),1226-1237 1991

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1990

  1. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin Investigation of one-dimensional defects in Si using the EDSR in Defect Control in Semicond., K.Sumino (ed.), Elsevier Sci.Publ. B.V. (North-Holland) p.1417-1422 1990

  2. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin Relationship between a combined resonance in plastically deformed n-type silicon with a dislocation structure Solid State Physics (Russian) 32(8), 2224-2229 1990

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1989

  1. V.V.Kveder, A.E.Koshelev, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin Temperature dependence of conduction by reconstructed dislocations in silicon and nonlinear effects Sov.Phys.JETP 68(1), 104-108 1989

  2. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin Conductivity along dislocations: temperature dependence and nonlinear effects. Combined resonance and structure peculiarities of plastically deformed silicon Solid State Phenom 6-7, 301-308 1989

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1987

  1. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin Characteristics of microwave losses in a super-conducting ceramic subjected to a magnetic field JETP Lett.(Russian) 46(Suppl.), 176-179 1987

  2. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin Combined electron resonance in a one-dimensional dislocation band JETP (Russian) 93(4), 1470-1479 1987

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1986

  1. A.V.Bazhenov, V.V.Kveder, L.L.Krasilnikova, A.I.Shalynin Light absorption due to deep dislocation states in silicon Solid State Physics (Russian) 28(1), 230-234 1986

  2. V.V.Kveder, V.Ya.Kravchenko, T.R.Mchedlidze, Yu.A.Osipian, D.E.Khmelnizkii, A.I.Shalynin Combined resonance at dislocations in silicon JETP Lett. (Russian) 43(4), 202-205 1986

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1985

  1. V.V.Kveder, Yu.A.Osipian, I.R.Sagdeev, A.I.Shalynin, M.N.Zolotukhin The effect of annealing and hydrogenation on the dislocation conduction in silicon Phys. Stat.Sol.(a) 87, 657-665 1985

  2. V.V.Kveder, Yu.A.Osipian, A.I.Shalynin Spin-dependent change in the RF photo conductivity of silicon crystals containing dislocations JETP (Russian) 88(1), 309-317 1985

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1984

  1. V.V.Kveder, Yu.A.Osipian, A.I.Shalynin The exodiffusion of hydrogen in dislocated crystalline silicon Phys.Stat. Sol.(a) 84, 149-156 1984

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1982

  1. V.V.Kveder, Yu.A.Osipian, A.I.Shalynin Spin-dependent recombination on dislocation dangling bonds in silicon JETP (Russian) 83(2), 699-714 1982

  2. V.V.Kveder, Yu.A.Osipian, A.I.Shalynin Investigation of spin-dependent recombination at dislocations in silicon Fiz. & Tekh. Poluprovodn. 16(8), 1459-1461 1982

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