Laboratory of semiconductor surfaces spectroscopy


  • Investigations of atomic and electronic structure of rare earth metal compounds (manganites, palladosilicides);
  • Fabrication of low-dimensional systems of metallic and semiconducting nanoobjects on the base of synthetic opal matrixes (110 layers of close packed SiO2 spheres), studies of their atomic and electronic structures and transport properties;
  • Investigations of atomic and electronic structure of ultrathin metallic coverages on semiconducting (Si, A3B5) and graphite surfaces;
  • Fabrication of low-dimensional structures (quantum dots, wires and metalattices) of noble, rare earth and transition metals on stepped surfaces of metals (W, Mo, Cu) and semiconductors (Si, A3B5), their studies by scanning probe microscopy (AFM, STM, SNOM) and electron spectroscopy techniques;
  • Material science aspects in refractory metal crystal growth and preparation of their surfaces;
  • Fabrication of planar structures based on C60 (in collaboration with LSDS, LMC LQT and IPMT RAS);
  • Development of ultra high vacuum low temperature scanning tunneling microscope working at high magnetic fields;
  • Development of high vacuum scanning probe complex based on SPM Smena with facilities for surface studies from room to liquid nitrogen temperatures (in collaboration with NT-MDT, Zelenograd);
  • Investigations of atomic and electronic structure of β-SiC(100) surface in a wide temperature range (80K1200K);
  • Photoemission from 2D-channels near the surfaces of narrow gap semiconductors;
  • Atomic and electronic structure studies of Sn coverages on InSb(100) surface.
LSSS works in collaboration with several Russian research institutes and companies (IPMT RAS, MISA, MSU, MGAPI, GINR, NT-MDT) and foreign scientific groups in Germany, Spain, Great Britain, Switzerland, Japan, Taiwan, Italy, France.

Copyright ISSP RAS, LSSS, 2006-2007
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