Three devices in the growth room
Main technical characteristics:
| Working temperature: | up to 1900 oC |
| Working pressure: | up to 10 MPa |
| Power: | 2-12 kWt (depends on the working temperature) |
| Ambient medium: | Inert gases or N2 |
| Pulling rate: | from 0.5-1 to 20-30 mm/h |
| Heater: | Resistive; graphite |
| Cooling: | Water |
| Personnel: | 1 per 2 devices |
| Methods of growth: | - High-Pressure Vertical
Bridgman (HPVB);
- High-Pressure Vertical Zone Melting (HPVZM); |
| Crystal shape: | Cylinder, cone or tape (plate) |
| Max. crystal diameter: | 40 mm (standard); 51 mm (by special order); |
| Max. crystal length: | 100 mm (standard); 130 mm (by special order); |
| Max. tape (plate) sizes: | 120 x 120 x 12 mm |
| Temperature regulator: | Included |
| Min. room area necessary: | 6 m2 per 1 device |
| Suitable for crystal growth of: | Wide-gap II-VI compounds ( ZnSe, ZnS,
ZnTe,
CdSe,
CdS
and their mixtures (e.g., Cd1-xZnxTe,
Cd1-xZnxSe);
Other chalcogenides (e.g., GaTe, MnSe, PbSe, PbS, PbTe, Bi2Se3, Bi2Te3); Doped metal chalcogenide crystals. |
Three devices in the growth room
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